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Article information
1997 , Volume 2, ¹ 6, p.12-23
Grigoryev Y.N., Gorobchuk A.G.
Numerical optimization of plasma-chemical etching reactor
The comparative computations of two most used
plasma-chemical etching reactor (PCER) schemes pedestal and stadium, distinguished by organization of supply and exhaust of gases, were carried out. The reacting gas medium was considered in hydrodynamic approach as binary gas mixture. The parameters of RF-discharge and rate constants of the main processes are assumed as known. The dependence of the etching uniformity on the protector geometry and regime parameter was studied. It was shown that the distribution of diffusion flows in reactor volume exert the main influence on the etching uniformity of wafer. The optimum geometry of protector have been found for wide range of operating regimes. The results of computations allow us to optimize the choice of PCER parameters for considered schemes.
[full text] Classificator Msc2000:- *76V05 Reaction effects in flows
Keywords: gas flow, mass transfer
Author(s):
Grigoryev Yurii Nikolaevich
Dr. , Professor
Position: General Scientist
Office: Federal Research Center for Information and Computational Technologies
Address: 630090, Russia, Novosibirsk, Ac. Lavrentiev ave., 6
Phone Office: (383) 330 87 45
E-mail: grigor@ict.nsc.ru
Gorobchuk Aleksey Gennadievich
Dr.
Position: Senior Research Scientist
Office: Federal Research Center for Information and Computational Technologies
Address: 630090, Russia, Novosibirsk, Ac. Lavreniev ave., 6
Phone Office: (383) 330-87-45
E-mail: al@ict.nsc.ru
SPIN-code: 2930-1281
Bibliography link:
Grigoryev Y.N., Gorobchuk A.G. Numerical optimization of plasma-chemical etching reactor // Computational technologies. 1997. V. 2. ¹ 6. P. 12-23
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