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Article information
2003 , Volume 8, Special issue, p.53-73
Grigoryev Y.N., Gorobchuk A.G.
Numerical simulation of plasma-chemical reactors
The interest to the investigation of processes in the plasma-chemical etching reactors (PCER) is defined by their wide-spread use in industrial production of semiconductor devices. The large number and complicated interconnection of factors that determine a quality and etching rate of wafers essentially limit the abilities of empirical optimization of PCER. The natural alternative is their optimization based on the mathematical modelling for which adequate numerical models are necessary. In the paper the results of development of numerical model of plasma-chemical reactors based on Navier-Stokes equations in Bussinesque approximation are presented. The model contains the original elements essentially raising its prognostic abilities. In particular, it takes into account the infrared radiation of multiatomic molecules that substantially influence the temperature distribution in the reactors. The mass transfer of active particles additionally includes the process of thermodiffusion. The effects of medium rarefaction, adequate gas phase and heterogeneous kinetics are considered. The abilities of proposed model are illustrated by it applications to studies of processes in the reactors of different constructive schemes. The results of optimization of etching uniformity by mechanical protectors are considered. The influence of temperature nonuniformities and medium rarefaction on the quality of wafer processing are quantitatively estimated. The comparative investigation of commonly used chemical kinetics models in the PCER are presented. The optimum composition of parent gas mixture with respect to the etching rate are obtained. In conclusion some perspectives are discussed for further development of the model, in particular, the application to virtual plasma reactor in operating systems.
Classificator Msc2000:- *76M20 Finite difference methods
- 76V05 Reaction effects in flows
- 76X05 Ionized gas flow in electromagnetic fields; plasmic flow
- 78A40 Waves and radiation
- 80A20 Heat and mass transfer, heat flow
Keywords: temperature distribution, implicit iterative finite difference scheme, approximation order, heat radiation transfer
Author(s):
Grigoryev Yurii Nikolaevich
Dr. , Professor
Position: General Scientist
Office: Federal Research Center for Information and Computational Technologies
Address: 630090, Russia, Novosibirsk, Ac. Lavrentiev ave., 6
Phone Office: (383) 330 87 45
E-mail: grigor@ict.nsc.ru
Gorobchuk Aleksey Gennadievich
Dr.
Position: Senior Research Scientist
Office: Federal Research Center for Information and Computational Technologies
Address: 630090, Russia, Novosibirsk, Ac. Lavreniev ave., 6
Phone Office: (383) 330-87-45
E-mail: al@ict.nsc.ru
SPIN-code: 2930-1281
Bibliography link:
Grigoryev Y.N., Gorobchuk A.G. Numerical simulation of plasma-chemical reactors // Computational technologies. 2003. V. 8. The Special Issue: Proceedings of the Russian-German Advanced Research Workshop on Computer Science and High Performance Computing, Part 2. P. 53-73
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